真空辐射加热基片的温度分布

HE TEMPERATURE DISTRIBUTION IN A SUBSTRATE RADIATIVELY HEATED IN VACUUM

  • 摘要: 真空辐射加热下基片表面温度分布的均匀性是薄膜制备中的关键问题之一. 采用数值计算和比色红外测温两种方法,研究了作者自行研制的真空辐射加热器(IMCAS-VRH)的性能. 利用IMCAS-VRH加热直径6in的单晶硅基片,当电功率为3860W时,基片表面平均温度为1093K,整个基片上的温度变化的测量值约为6K. 基片表面温度分布的计算结果与测量数据符合得很好,进一步的计算分析表明钼丝对辐射的遮挡效应、隔热屏和基片热传导等对基片温度分布均匀性有重要影响.

     

    Abstract: How to reach a uniformly distributed temperature in a substrateradiatively heated in vacuum is one of the major issues in the thin filmdeposition. In this article, numerical calculations and infraredcolorimetric measurements of temperature are made to analyze a radiation heater usedin vacuum, named as IMCAS-VRH. IMCAS-VRH is used to heat a monocrystal siliconsubstrate with a diameter of 6 inches, under an electric power of3\,860\,W. The mean temperature over the substrate is 1\,093\,K, while thewhole temperaturevariation is within 6\,K. The calculated temperature distributions agree wellwith the measured data, and further computational analysis shows that the Mofilaments' shielding from radiation, the thermal insulation plates, andthe thermal conductivity of the radiation cavity all affectsignificantly either the mean temperature or the temperaturedistribution uniformity in the substrate.

     

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